Transient photoluminescence of shallow donor bound excitons in GaN
نویسندگان
چکیده
منابع مشابه
Optical and magnetic resonance studies of Mg-doped GaN homoepitaxial layers grown by molecular beam epitaxy
Low-temperature photoluminescence (PL) and optically detected magnetic resonance (ODMR) at 24GHz have been performed on a series of MBE-grown Mg-doped (10–10 cm ) GaN homoepitaxial layers. High-resolution PL at 5K revealed intense bandedge emission with narrow linewidths (0.2–0.4meV) attributed to annihilation of excitons bound to shallow Mg acceptors. In contrast to many previous reports for G...
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Time-resolved photoluminescence ~PL! spectroscopy has been used to study the radiative recombination of excitons bound to ionized donors in GaN doped with both Mg and Si at concentrations of 5310/cm and 1.5310/cm, respectively. Low temperature (T;10K) time-resolved, as well as integrated PL spectra, identify an ionized donor-bound ~Si! exciton peak (DX) approximately 11.5 meV below and a neutra...
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GaN films were grown on (100) GaAs substrates by metalorganic chemical vapor deposition and were found to be of (200) cubic or (111) cubit/(0002) hexagonal phase. Their photoluminescence characteristics remained invariant with material phase. We report assignment of band-edge photoluminescence near 3!36 eV and 3.15-3.31 eV in apparently cubic GaN to intrinsic/bound excitons and phonon-assisted,...
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GaN layers with wurtzite structure were found to exhibit intense photoluminescence (PL) at 3.47eV (T = 10K) corresponding to recombination of excitons bound to neutral donors. The dependence of this luminescence on the growth conditions, layer thickness and density of excitation power was studied. New PL bands were evidenced in the UV region under high levels of excitation (Iexc 3 0.56mJ/cm ).
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Photoluminescence (PL) properties are reported for a set of m-plane GaN films with Mg doping varied from mid 10 18 cm -3 to well above 10 19 cm -3 . The samples were grown with MOCVD at reduced pressure on low defect density m-plane bulk GaN templates. The sharp line near bandgap bound exciton (BE) spectra observed below 50 K, as well as the broader donor-acceptor pair (DAP) PL bands at 2.9 eV ...
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